Norwegian scientists have developed a gallium arsenide (GaAs) nanowire solar cell that can be used as a top cell in a dual tandem cell with a bottom silicon cell. The device is claimed to be the ...

By using gallium antimonide and indium arsenide instead of silicon, MIT researchers created vertical nanowire transistors.

Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making integrated-circuit chips. However, the vast majority of ...

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.

Materials like indium arsenide (InAs) and gallium antimonide (GaSb ... Nanoscale heterojunctions, such as nanorod and nanowire arrays, have been utilized to develop high-performance, broadband ...

or gallium and arsenide (GaAs). Gallium has three (III) valence electrons, while nitride and arsenide have five (V). Providing high electron mobility, III-V semiconductors are used in high ...

To address these limitations, the MIT team created a new three-dimensional transistor using ultrathin semiconductor materials, including gallium antimonide and indium arsenide. The design ...

The synthesis involved a gallium arsenide (GaAs) solar cell with a gallium indium arsenide phosphide emitter layer. NREL has unveiled a new design for III-V rear heterojunction solar cells based ...