STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride ...

Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...

Power, efficiency, and reliability are non-negotiable for satellites, radars, and 5G networks. GaN-on-SiC amplifiers deliver ...

The race beyond silicon is already underway. As these emerging semiconductor materials become more viable, they will enable ...

Arrow Electronics brings high-efficiency power solutions and full-system innovation to PCIM 2025 for next-gen energy design.

Wide-bandgap materials also allow for smaller ... and Oak Ridge National Laboratory examined a potential route to achieve peak performance of aluminum gallium nitride, Al x Ga 1-x N, a key material ...

The pursuit of accurate temperature characterisation in GaN HEMTs confronts fundamental limitations of existing methodologies ...

The bottom layer has a high concentration of free electrons (for example n-type GaN doped with Si) followed by multiple alternating thin layers (1–30 nm) of material with a smaller bandgap ...

Hence, a realization in GaN would avoid the use of an external Silicon circuit to generate these voltages and currents. This project aims to investigate the feasibility of a PTAT and/or bandgap ...

Wide-bandgap materials also allow for smaller ... a potential route to achieve peak performance of aluminum gallium nitride, Al x Ga 1-x N, a key material for increasing power electronics ...