and amplifier circuits for highly efficient satellite communication based on the wide-bandgap compound semiconductor gallium nitride (GaN). These are intended to operate in both low Earth orbit ...

The pursuit of accurate temperature characterisation in GaN HEMTs confronts fundamental limitations of existing methodologies ...

Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...

Hence, a realization in GaN would avoid the use of an external Silicon circuit to generate these voltages and currents. This project aims to investigate the feasibility of a PTAT and/or bandgap ...

STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride ...

The bottom layer has a high concentration of free electrons (for example n-type GaN doped with Si) followed by multiple alternating thin layers (1–30 nm) of material with a smaller bandgap ...

Arrow Electronics brings high-efficiency power solutions and full-system innovation to PCIM 2025 for next-gen energy design.

Wolfspeed, Inc.’s WOLF share price has dipped by 42.94%, which has investors questioning if this is right time to buy.

Wide-bandgap materials also allow for smaller ... a potential route to achieve peak performance of aluminum gallium nitride, Al x Ga 1-x N, a key material for increasing power electronics ...

Wolfspeed, Inc. is an innovator of wide bandgap semiconductors, focused on silicon carbide and gallium nitride (GaN) materials and devices for power and radio-frequency (RF) applications.

has developed an optically isolated differential probing family dedicated to enhancing efficiency and performance testing of fast-switching devices such as wide bandgap GaN and SiC semiconductors.