Despite recent tensions between the United States government and Latin American countries over migration and tariffs, th ...
STMicroelectronics and Innoscience sign GaN technology development and manufacturing agreement Joint Development Agreement (JDA) on GaN ...
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...