Advances in semiconductor and power electronics technologies, led by increasing deployment of wide-bandgap power devices, are ...

The US Northeast Microelectronics Coalition (NEMC) Hub has announced $1,432,373 in awards to 19 startups and small businesses ...

Latest releases include bi-directional GaNFast ICs with IsoFast™ drivers, auto-qualified GaNSafe ICs, dedicated GaNSense ...

Today, most converters employ switch-mode topologies. At their core, power transistors switch on and off at high frequency, ...

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

The "Semiconductor Devices for High-Temperature Applications: Market Opportunities" report has been added to ResearchAndMarkets.com's offering. This report provides an overview of the global ...

Chhattisgarh lays foundation for India's first GaN-based semiconductor plant, aiming to produce 10 billion chips annually by ...

is poised to meet growing demand for next-generation semiconductor solutions. Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across critical ...

The telecom device packaging facility will drive self-reliance in ... Globally, Gallium Nitride (GaN) is seen as a ...

Navitas high-power GaNSafe 4 th generation family integrates control, drive, sensing, and critical protection features that ...

Semiconductor devices for high-temperature applications use a variety of materials such as silicon, SiC, GaN and others. These materials offer different benefits in high-temperature environments.