Advances in semiconductor and power electronics technologies, led by increasing deployment of wide-bandgap power devices, are ...

A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was ...

Hon Hai Research Institute (HHRI) has invested in research on beta-gallium oxide (β-Ga2O3) ultra-wide bandgap (UWBG) ...

We work on improving device thermal management, electrical performance and reliability, using wide and ultra-wide bandgap semiconductors. In today's fast-moving technological world, semiconductor ...

Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

For UV photonics, the wide bandgap materials have been widely used as the active region. However, the pursuit of efficient UV emitters with wavelength less than 250 nm has been limited to the ...

has enhanced its double-pulse test portfolio enabling customers to benefit from accurate and easy measurement of the dynamic characteristics of Wide-Bandgap (WBG) power semiconductor bare chips.