This patenting activity is marked by the acceleration of Toshiba in the SiC power device patent landscape, bringing it up the ...

Toshiba Electronics Europe has announced volume shipments of its 3rd generation, 650V SiC MOSFETs in the compact DFN8x8 ...

MEC175xB controllers are compatible with MPLAB ® X Integrated Development Environment (IDE), and supported by example ...

Pictured above: Pulsed-mode MOCVD is far better at producing silicon-doped AlN layers than conventional MOCVD, according to current-voltage transmission line measurements using electrodes with 4 µm ...

Nano2® 415 SMD Series Fuse, the first surface-mount fuse from Littelfuse with a 1500 A interrupting rating at 277 V. Designed ...

STMicroelectronics says its new high-voltage half-bridge gate drivers for GaN applications add extra flexibility and features ...

SiC and GaN company Navitas Semiconductor has appointed Cristiano Amoruso to the company’s board of directors, effective ...

Wolfspeed is waiting on $750 million in federal funding under the US CHIPS Act. In March 2025, President Donald Trump said US ...

TrendForce’s latest research shows that weakening demand in the automotive and industrial sectors has slowed shipment growth ...

Wolfspeed is waiting on $750 million in federal funding under the US CHIPS Act. In March 2025, President Donald Trump said US ...

Infineon Technologies is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, capable of actively blocking voltage ...

The first products based on the new technology will be 1200 V in Infineon ID-PAK for automotive traction inverters and ...