Abstract: This paper presents the design and implementation of a 10W GaN-on-Si Doherty Power Amplifier (DPA) for operation in the 15 GHz 6G band. The DPA was fabricated using Infineon’s RF GaN-on-Si ...

Abstract: This paper reports temperature-dependent small-and large-signal measurements of a 32 – 38 GHz GaN-based SPDT switch MMIC which employs a double shunt topology and is designed into a 140 nm ...