Image Credit: OkyayTech ALD Get access to the full paper By utilizing triethylgallium (TEG) and Ar/O₂ plasma, the research demonstrates the growth of high-quality gallium oxide on silicon ...

We recently demonstrated world-record RF power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2 μm gate length ...