Gallium nitride has proven to be an exceptional alternative to silicon, especially in devices bound for outer space.

For those wanting a little more on the advantages of GaN power transistors in small mains power supplies, ElectrArc240 has ...

The bottom layer has a high concentration of free electrons (for example n-type GaN doped with Si) followed by multiple alternating thin layers (1–30 nm) of material with a smaller bandgap ...