Learn more about integrating GaN power FETs into switch-mode power supplies and ... Dead times are necessary to prevent a short circuit from the high-side voltage rail to ground.

Infineon’s 650-V G5 bidirectional switch integrates two switches in a single device to actively block current and voltage in ...

Gallium nitride has proven to be an exceptional alternative to silicon, especially in devices bound for outer space.

Efficient Power Conversion (EPC) has announced the availability of the EPC2366, a 40V, 0.8 mΩ GaN device designed to displace ...

GaN devices won the Google Littlebox Challenge, because their sub-10ns switching speed permits converters to be made smaller with higher efficiencies than silicon or SiC power transistors. This high ...

Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an ...

Technological innovations in power electronics are not only essential for the success of the energy transition, they also provide sustainable support for economic development in Europe. The Fraunhofer ...

The EasyPACK CoolGaN module integrates 650 V CoolGaN power semiconductors with low parasitic inductances, achieved through ...