Gallium nitride has proven to be an exceptional alternative to silicon, especially in devices bound for outer space.

STMicroelectronics says its new high-voltage half-bridge gate drivers for GaN applications add extra flexibility and features ...

Infineon’s 650-V G5 bidirectional switch integrates two switches in a single device to actively block current and voltage in ...

ROHM has developed N-channel power metal-oxide semiconductor field-effect transistors (MOSFETs) featuring industry-leading ...

AOS Gen3 SiC MOSFETs provide up to a 30% improvement in switching FOM, while maintaining low conduction losses at high-load ...

Engineers from Ohio State University are claiming to have opened the door to the fabrication of far smaller AlN/GaN HEMTs ...

Infineon Technologies is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, capable of actively blocking voltage and current in both directions.

Infineon Technologies AG has launched the CoolGaN Bidirectional Switch (BDS) 650 V G5 — a gallium nitride (GaN) switch that can block ... to replace traditional back-to-back switch setups in power ...

Infineon Technologies is introducing the CoolGaN™ bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively ... The bidirectional CoolGaN switch offers several key ...