Learn more about integrating GaN power FETs into switch-mode power supplies and ... Dead times are necessary to prevent a short circuit from the high-side voltage rail to ground.

Sponsored by Texas Instruments: Gallium-nitride devices in transformer-outline leadless packages can serve in applications such as data-center power-supply units, electric-vehicle onboard chargers ...

Navitas Semiconductor has announced a new family of GaNSense Motor Drive ICs targeting home appliances and industrial drives ...

Navitas Semiconductor has announced a new family of GaNSense Motor Drive ICs targeting home appliances and industrial drives ...

May 01, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN ... features such as ...

Due to the high ... analog circuits, etc.) into the same package as a GaN-based device. This level of integration enables higher power densities compared to silicon devices with RF and digital ...

and GaN-based logic circuits. The difficulty of forming viable p-type devices hampers the ability to create CMOS-like low-power devices with GaN. Silicon PMOS devices have been integrated with GaN ...

Navitas Semiconductor has announced that its high-power ... discrete GaN FET, requiring no VCC pin. The Automotive Electronics Council (AEC) lists various qualifications focused on failure ...

STMicroelectronics says its new high-voltage half-bridge gate drivers for GaN applications add extra flexibility and features ...