IEEE

Gate Length Dependence of Bias Temperature Instabilities up to 400 °C in 4H-SiC CMOS Devices

Abstract: This letter reports the bias temperature instabilities (BTI) of 4H-SiC CMOS devices with different gate lengths (L) and gate widths (W) for integrated circuits at 400 °C for the first time.
IEEE

CMOS-MEMS Nano Force Sensor with Sub-μm U-Channel Suspended Gate SOIFET

Abstract: This article presents a novel sub-μM U-channel suspended gate SOIFET (USG-SOIFET) based nano-force sensor. The pseudo short channel effect in suspended gate FET (SGFET) is discussed, and the ...