SemiQ Inc, a US SiC company, has announced the QSiC 1200V MOSFET, a third-generation device that shrinks die size while ...

Ams Osram has reported delivering cost savings ahead of plan with positive free cash flow (FCF) of €12m in FY24, Q4 revenues ...

Power Integrations' CEO Balu Balakrishnan has announced his retirement once a successor is in place. Balakrishnan, 70, ...

APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy ...

Theodoros Serghiou of the University of Glasgow’s James Watt School of Engineering led the development of the EGOFET. He said ...

Displacing GaAs PAs is a long-term goal for Finwave, which has made progress on many fronts since Lesaicherre took charge in ...

The Japanese AIST Group (consisting of National Institute of Advanced Industrial Science and Technology and AIST Solutions) ...

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KRISS has addressed these challenges by developing a new InAsP material, grown on an InP substrate as the light-absorbing ...

Scientists from the French research organisation CEA-Leti presented three papers at Photonics West 2025 detailing the ...

Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...

Tunable lasing at around 405 nm is realised with an InGaN device featuring a narrow-ridge active channel and a periodically ...