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Compound Semiconductor14h
Bristol University team makes GaN breakthrough
Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...
Securities.io17h
Unlocking the 6G Revolution with Next-Gen GaN Semiconductors
Semiconductors are the foundation of electronic and Internet of Things (IoT) devices and telecommunication equipment. They ...
C&EN6d
Defluorination of Per- and Polyfluoroalkyl Substances (PFASs) with Hydrated Electrons: Structural Dependence and Implications to PFAS Remediation and Management
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IEEE14d
Enhanced Responsivity of GaN Metal–Semiconductor–Metal (MSM) Photodetectors on GaN Substrate
Impact Statement: High spectra response of MSM ultraviolet (UV) photodetectors (PDs) based on GaN substrate with different diameters of Al nanodots on the surface were realized. The UV PDs exhibit low ...
IEEE14d
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
Abstract: Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (ITO) metal contacts were successfully ...