This paper proposes that the sweeping out of the carriers can be attributed solely to voltage variation, rather than to the passage of time, representing a capacitive effect termed diffusion ...

Making the set of tubes concentric required truing up the bores on the lathe, starting with the inner-most tube and adding the next-largest tube once the outer diameter was lapped to spec.

Abstract: The capacitance of the gate oxide is a crucial parameter to model the performance of MOSFETs. The traditional expression used to compute it stems from the parallel-plate capacitor formula.