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Technological innovations in power electronics are not only essential for the success of the energy transition, they also provide sustainable support for economic development in Europe. The Fraunhofer ...
and amplifier circuits for highly efficient satellite communication based on the wide-bandgap compound semiconductor gallium nitride (GaN). These are intended to operate in both low Earth orbit ...
Gallium nitride has proven to be an exceptional alternative to silicon, especially in devices bound for outer space.
To achieve these goals, developers are turning to gallium nitride (GaN), a wide-bandgap semiconductor technology that achieves high switching frequencies. Compared to competing power semiconductor ...
Gallium nitride has long been on the horizon for a variety of uses in semiconductors, but implementing this on a commercial scale has been relatively slow due to a variety of technical hurdles. That ...
PCIM Europe is the ideal stage to show how EPC's GaN is transforming power electronics-from server power to robotics, we're helping engineers unlock the full potential of wide bandgap solutions ...
The bottom layer has a high concentration of free electrons (for example n-type GaN doped with Si) followed by multiple alternating thin layers (1–30 nm) of material with a smaller bandgap ...
Beneq announces that its Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a Tier 1 GaN power device manufacturer in Asia. This ...
Among these, gallium nitride (GaN), a key material in blue ... The piezoelectric MgSiN₂ exhibited a wide bandgap of approximately 5.9 eV (direct) and 5.1 eV (indirect), comparable to traditional ...
Market growth is fueled by increasing demand for hydrogen as a cleaner energy source. Growing adoption of wide bandgap semiconductors like SiC and GaN, rising environmental concerns, and stringent ...
Wolfspeed, Inc. is an innovator of wide bandgap semiconductors, focused on silicon carbide and gallium nitride (GaN) materials and devices for power and radio-frequency (RF) applications.