Gallium nitride has proven to be an exceptional alternative to silicon, especially in devices bound for outer space.

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...

The bottom layer has a high concentration of free electrons (for example n-type GaN doped with Si) followed by multiple alternating thin layers (1–30 nm) of material with a smaller bandgap ...