Wurtzite-structured crystals, characterized by their hexagonal symmetry, are widely valued for their unique electronic and ...

Technological innovations in power electronics are not only essential for the success of the energy transition, they also ...

Advances in semiconductor and power electronics technologies, led by increasing deployment of wide-bandgap power devices, are ...

Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

Infineon is mainly targeting the two market with its expanding portfolio of 2 kV power devices: the solar sector and the ...

Abstract: In this letter, a low-loss W-band waveguide lowpass filter (LPF) is proposed with improved frequency selectivity, wide stopband, and compact size. The novel design is capable of achieving a ...

The PCIe Gen3 computer I/O bus specification uses the somewhat slower rate of 8 Gb/s but defines x1, x2, x4, x8, x12, and x16 configurations to address the wide variety of data transfer rates required ...

Can be utilized as non-precision sleep mode bandgap, allowing a higher powered ... 1-VIA’s VSCOM4L400ALDO0V9 IP is a linear Low-Dropout (LDO) voltage regulator providing precise and programmable ...

The new SiC Schottky diodes from Diodes Incorporated deliver industry-leading FOM and system efficiency. Diodes Incorporated (Diodes) has announced an expansion of its silicon carbide (SiC) product ...

Nexperia has introduced a new range of high signal integrity, bidirectional electrostatic discharge (ESD) protection diodes housed in advanced flip-chip land-grid-array (FC-LGA) packaging. This ...